elektronische bauelemente SSD20N15 20a, 150v, r ds(on) 70m n-channel enhancement mosfet 25-feb-2016 rev. b page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 20n15 rohs compliant product a suffix of -c specifies halogen free features 150v, 20a, r ds(on) 70m @v Q gs =10v super high dense cell design for extremely low r ds(on) high power and current handing capability green device available package information package mpq leader size to-252 2.5k 13 inch marking absolute maximum ratings (t c =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 150 v gate-source voltage v gs 25 v t c =25c 20 a continuous drain current @v gs =10v 1 t c =100c i d 14 a pulsed drain current 2 i dm 70 a t c =25c 50 w total power dissipation 3 t a =25c p d 2 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance from junction to case 1 r jc 2.5 c / w maximum thermal resistance from junction to ambient 1 r ja 62.5 c / w to-252 (d-pack) a c d n o p g e f h k j m b 1 gate 3 source 2 drain date code millimeter millimeter ref. min. max. ref. min. max. a 6. 35 6.90 j 2.336 ref. b 4.95 5.50 k 0.89 ref. c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58 ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD20N15 20a, 150v, r ds(on) 70m n-channel enhancement mosfet 25-feb-2016 rev. b page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t c =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 150 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 25v t j =25c - - 1 drain-source leakage current t j =85c i dss - - 30 a v ds =120v, v gs =0 - 55 70 v gs =10v, i d =15a static drain-source on-resistance 2 r ds(on) - 65 85 m v gs =6v, i d =10a total gate charge q g - 20 - gate-source charge q gs - 5.5 - gate-drain (miller) charge q gd - 7 - nc i d =15a v ds =75v v gs =10v turn-on delay time t d(on) - 6 - rise time t r - 5 - turn-off delay time t d(off) - 13 - fall time t f - 6 - ns v ds =75v i d =10a v gs =10v r gen =3 input capacitance c iss - 1270 - output capacitance c oss - 115 - reverse transfer capacitance c rss - 55 - pf v gs =0v v ds =25v f =1mhz source-drain diode characteristics diode forward voltage 2 v sd - - 1.2 v v gs =0v, i s =10a, t j =25c continuous source current 1,4 i s - - 20 pulsed source current 2,4 i sm - - 70 a v d =v g =0v, force current reverse recovery time t rr - 30 - ns reverse recovery charge q rr - 100 - nc i f =10a, di/dt=100a/ s, t j =25c notes: 1. the data is tested when the surface of the devic e is mounted on a 1 inch 2 fr-4 board with 2oz copper, Q 10sec, 110c /w at steady state 2. the data is tested by the pulse: pulse width Q 300us, duty cycle Q 2% 3. the power dissipation is limited by 150c juncti on temperature 4. the data is theoretically the same as i d and i dm ; in real applications, it should be limited by the total power dissipation.
elektronische bauelemente SSD20N15 20a, 150v, r ds(on) 70m n-channel enhancement mosfet 25-feb-2016 rev. b page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves .
elektronische bauelemente SSD20N15 20a, 150v, r ds(on) 70m n-channel enhancement mosfet 25-feb-2016 rev. b page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSD20N15 20a, 150v, r ds(on) 70m n-channel enhancement mosfet 25-feb-2016 rev. b page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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